New 100V 3.2mΩ SGT MOSFET for PD power supply | Yangjie Electronic Technology

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New 100V 3.2mΩ SGT MOSFET for PD power supply

New 100V 3.2mΩ SGT MOSFET for PD power supply Back

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Introduction In recent years, the rapid popularity of various high-current charging protocols in the field of PD power supplies has made the FOM value of synchronous rectifier MOSFETs more stringent. Yangjie Technology launched advanced Copper Clip PDFN5060 package products YJG120G10AR/YJG120G10BR, reducing the packaging resistance of traditional PDFN5060 at the same time, reduce the package parasitic parameters, improve the heat dissipation capacity, to bring customers a better choice.

Features • Using the SGT process, lower Rds (on) and Qg are obtained, resulting in lower FOM and reduced system losses in PD schemes
• Compared with traditional PDFN5060 package, Clip product has strong overcurrent capability, low thermal resistance, and a wider range of SOA to cope with various abnormal working conditions in PD power supply

SPECIFICATION

YJG120G10BR YJG120G10AR

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