1200V 40mΩ SiC MOSFET | Yangjie Electronic Technology

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1200V 40mΩ SiC MOSFET

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Introduction Since 2021, PV inverter market has entered a period of rapid development, and the demand for SiC power devices has increased rapidly.SiC diodes and Mosfets are used in applications such as BOOST circuits. Due to the high frequency characteristics of the third generation semiconductor materials, the switching frequency of the system can be increased, which can optimize the energy consumption and volume of the entire system. Our SiC Mosfet can match the needs of customers in PV, EV industry, Its switching performance, flow capacity and product reliability can be compared with the best in the industry;
It is not only suitable for conventional switch applications, but also meet the control requirements of high voltage and high speed switch applications, using environmental protection materials, in line with RoHS standards

Features 1、High temperature resistance, operating temperature (150°C); Unipolar device, fast switching speed, low loss, suitable for high voltage, high frequency applications
2、Using advanced thinning technology, SiC Mosfet has excellent low impedance characteristics and can reduce the energy loss of the device
3、TO247AB, TO247-4L and other packaging options
4、It has passed the industry's rigorous reliability certification, including high-volume HTRB, HTGB and HV-H3TRB tests

SPECIFICATION

YJD212040NCFG1 YJD212040NCTG1

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