1200V 80 mΩ SIC MOSFET | Yangjie Electronic Technology

Home
About Us
Company History Honor Compliance Newpros
Product

Discrete Chips Integrated circuit

Automotive

Small Signal Switching Diode
Small Signal Schottky Diode
Small Signal Zener Diode
Small Signal Transisitor
SMD Rectifier Diode
Fast Recovery Rectifier Diode
SMD Schottky Diode
Transient Voltage
Suppressor
ESD Protection Diode
Power MOS Transistor
Power Transistor
Small signal
digital transistor
Power Zener Diode
SiC Automotive
IGBT Automotive

Rectifier

Bridge Rectifier
Standard Recovery Rectifier
Fast Recovery Rectifier
High Efficient Rectifier
Super Fast Recovery Rectifier
Schottky Barrier Rectifier
PV Diode
Welded Diode

Automotive Rectifier
Rectifier Diode Fast Recovery Rectifier Diode Schottky Diode

Protection Diode

Transient Voltage Suppressor
Thyristor Surge Suppressor
ESD Protection Diode
Zener Diode

Automotive Protection Diode
Transient Voltage Suppressor ESD Protection Diode Power Zener Diode

Small Signal

Small Signal Switching Diode
Small Signal Schottky Diode
Small Signal Zener Diode
Small Signal Transisitor
Small Signal Digital
Transisitor
Power Transistor

Automotive
Small Signal
Small Signal Switching Diode Small Signal Schottky Diode Small Signal Zener Diode Small Signal Transisitor Power Transistor Small Signal Digital
Transisitor

MOSFET

ALL MOSFET
Automotive MOSFET

High-voltage
MOSFET(500V-1000V)
SJ MOSFET SiC MOSFET

Low & Medium Voltage
MOSFET(12V-400V)
N-Channel MOSFET P-Channel MOSFET

NP MOSFET(12V-300V)
Complementary MOSFET Dual N-Channel MOSFET Dual P-Channel MOSFET Half-bridge MOSFET

IGBT

IGBT Module
IGBT Discrete
IGBT Automotive

Module

Rectifier Diodes Module
Fast Recovery Module
Schottky Module
Thyristor Module
Thyristor / Rectifier
Diode Module
Fast/Phase-controlled
Thyristor

SiC

SiC Schottky Diode
SiC MOSFET
SiC Schottky
Diode Modules
SiC MOSFET
Modules
SiC Automotive
Schottky Diode
SiC Automotive
MOSFET

4/5″wafer

STD Chip
FRD Chip
EPI Chip
TVS Chip
HVB High Voltage Module Chip
Automotive Electronics Chip

6″wafer

TSBD Chip
PSBD Chip
FRED Chip
LBD Chip
PMBD Chip
ESD Chip

Integrated circuit

LOAD Switches
LDO
Shunt Regulator
DC-DC

Product Cross

CN EN

Home

About Us

Newpros

1200V 80 mΩ SIC MOSFET

1200V 80 mΩ SIC MOSFET Back

PDF

Introduction 1. In recent years, the PV inverter market has entered a period of rapid development, and the demand for silicon carbide power devices has increased rapidly. When silicon carbide diode and MOSFET should be used in the BOOST circuit, the switching speed of the system can be improved, so as to optimize the energy consumption and volume of the whole system.
2. Silicon carbide MOSFET to match the PV industry customer needs, switching performance, pass-through capacity and product reliability can be standardized to the industry's best;
3. It is not only suitable for conventional switching applications, but also meets the high pressure and high speed switching applications with high control requirements. It adopts environment-friendly materials and conforms to RoHS standards.

Features 1. High temperature resistance, operating temperature (175°C); Unipolar device, fast switching speed, low loss, suitable for high voltage, high frequency application conditions;
2. Using advanced thinning process, SIC MOSFET has excellent low impedance characteristics, reduce device energy loss;
3. Product packaging type: TO-247-3L, TO-247-4L and other packaging forms can be selected;
4. Passed the stringent reliability certification of the industry, including HTRB, HTGB test and HV-H3TRB test in large quantities.

SPECIFICATION

YJD212080NCFG1

Related new products