CN EN
Home
About Us
Newpros
120V SGT process N-channel MOSFET
120V SGT process N-channel MOSFET Back
PDF

Introduction 1. Adopt Yangjie Technology SGT special process to optimize the performance of internal conduction resistance (Rdson) and gate charge (Qg) according to the requirements of motor drive and power supply application, reduce conduction loss and switching loss, and improve system efficiency;
2. Solve the problem of high side voltage spike caused by high DI/DT when high-speed Gan power supply is applied, and improve the overall reliability of the product.
Features 1. Adopt Yangjie SGT special process design, with higher process stability and reliability;
2. The series products have faster switching speed, smaller gate charge and higher application efficiency;
3. Using PDFN5060 package, better thermal resistance characteristics.
SPECIFICATION

YJG88G12A

Related new products

N100V MOSFET for Automotive Electronic Applications

C2&E3 IGBT Modules for Variable-frequency Drive

650V Super Junction N-Channel MOSFET

High Temperature Resistant Schottky Diode

MMBZ Series ESD with Voltage Regulation Characteristics

SOD-323HE Package Transient Voltage Suppressors

Constant VC ESD Product

N60V SGT MOSFET

N150V MOSFET for Industrial Control

IGBT Discrete For PTC of Auto Industry