CN EN
Home
About Us
Newpros
IGBT Micro Trench Discrete for PV/Eenergy Storage/EV Charger Application
IGBT Micro Trench Discrete for PV/Eenergy Storage/EV Charger Application Back
PDF

Introduction 1、TO-247-3L/TO-247-4L and other packages;
2、650V 50A, Si and SiC hybrid packaging products for different applications;
3、It is mainly used for PV/EV charger/Eenergy Storage applications, and adopts advanced trench design technology to meet the requirements of high efficiency of power devices in power conversion system;
4、Other market mainstream products can be completely pin to pin replaced by our related series products;
5、Use environmentally friendly materials and meet RoHS standards;
Features 1、1.6um micro-trench design, excellent product performance, with low Vce(sat) and fast switching characteristics;
2、S series product with medium speed for 20-30Khz application demand and H series product with high speed for 30-40Khz;
3、Tjmax=175℃,high reliability;
SPECIFICATION

DGZ50N65CTH2A DGZ50N65CTS2A

Related new products

N100V MOSFET for Automotive Electronic Applications

DFN1608 Package Small Signal Schottky Diode for Mobile Phone PCB

Three-phase Rectifier Module N0/N1 Product

N+P Dual 30V Trench MOSFET for Fan Control

High frequency C3 IGBT Module

Optimization Design of Rectifier Bridge —— New Package GBU-L

P 40V Trench MOSFET for Load Switch Application

New 100V 3.2mΩ SGT MOSFET for PD power supply

DFN1006-3L Package Small Signal Device

SKBPC75 High Current Three Phase Bridge Rectifiers