Product Cross
CN EN
Home
About Us
Newpros
N60V SGT MOSFET
N60V SGT MOSFET Back
 PDF

Introduction 1、DFN3333-8L 、PDFN5060-8L、TOLLand other packages，It is more suitable for compact design；
2、It has the characteristics of strong overcurrent capability, low thermal resistance, and wider range of SOA;
3、Suitable for applications such as motor drive /BMS/ mobile energy storage;
4、Specially designed for body diodes, it has better EMI characteristics.
Features
SPECIFICATION

YJG80G06B YJG85G06B YJG85G06H YJG95G06B YJG140G06A YJG210G06AR YJQ70G06A YJT220G06H YJT300G06H

Related new products

SMB-W Package EM540BG

IGBT Micro Trench Discrete for PV/Eenergy Storage/ EV Charger Application

TO-252 Package Power Transistor for Motor Driver & High Power Frequency Converter

Small Signal Schottky and Switching Diode in DFN0603 Package

N60V SGT MOSFET

New 100V 3.2mΩ SGT MOSFET for PD power supply

High frequency C3 IGBT Module

SGT N80-85V Power MOSFET

DFN1006-3L Package Small Signal Device

N60V MOSFETs for Automotive Electronic Applications
About Us
Company History Honor Compliance Newpros
Products
Automotive Rectifier Protection Diode Small Signal Mosfet IGBT Module Press-pack Device SiC 4/5″wafer 6″wafer Integrated circuit
Application
Automotive Clean Energy Industrial Power Supply Home Appliance Security Smart Meter Telecommunication
Quality
Technical Resources Quality Document Reliability Test PCN/EOL Event
Investment
Overview Reports Stock market GDR OFFERING
Follow Us
Yangjie Technology SZ300373

11.88

▼RMB
2023-03-24 15:59:10

Tel： 400 106 0780(8:00~12:00 13:30~17:30)

E-mail： yangjie@21yangjie.com

Address： 6 Heye West Road, Hanjiang District, Yangzhou

WeChat QR code

©2023 Yangzhou Yangjie Electronic Technology Co.,Ltd. 苏ICP备12043831号-1   苏公网安备 32100302010286号
Powered by SE