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SGT N80-85V Power MOSFET
SGT N80-85V Power MOSFET Back

Introduction 扬杰科技最新推出的N80-85V SGT系列MOSFET，采用SGT(Shield Gate Trench MOSFET) MOSFET结构及工艺制造方法，具有传统Trench MOSFET低导通损耗的优点，同时具有更低的开关损耗。 SGT MOSFET作为开关器件，广泛应用于新能源电动车BMS、逆变电源系统、电机驱动系统及其他电源管理系统，是其核心的功率控制部件。 除传统TO系列封装外，采用Copper Clip封装工艺的DFN5060产品也即将推出。 扬杰科技目前已推出N40V,N60V,N80-85V,N85V,N100V,N120V多个电压平台的系列化解决方案,供客户根据实际需求灵活选择。
Features 1、采用SGT工艺，极低的Rdson和优异的开关特性，带来更低的FOM，减小系统损耗。
2、和传统Trench工艺比Ciss/Qg参数都有大幅优化，设计MOSFET驱动时有更多选择。
3、针对系统应用中的各种异常工作状态，优化MOS产品EAS特性，提高系统可靠性。
SPECIFICATION

YJP120G08A YJP118G08H YJG100G08E YJG100G08A YJD110G08A YJB120G08A YJB118G08H

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