CN EN
Home
About Us
Newpros
SJ MOSFET for PV Micro-inverter & Industrial /Server Power Supplies
SJ MOSFET for PV Micro-inverter & Industrial /Server Power Supplies Back
PDF

Introduction TO-247 and TOLL encapsulated N600V/650V SJ MOSFETs are manufactured by deep trench technology and multi-layer epitaxy technology, with lower on-state resistance Rds and gate charge Qg, significantly reducing turn-on and turn-off losses. The products can support higher frequency and dynamic response, which is suitable for applications of high power density and high efficiency power electronic conversion systems.
Features 1. Deep trench and multi-layer epitaxy technology is applied, lower internal resistance and excellent switching property;
2. TOLL, TO-247 encapsulation, suitable for high-power applications;
3. Strong UIS capability, better Qg and Rds parameters, which can support higher frequency and dynamic response.
SPECIFICATION

YJN48C60HJ YJT33C60HJ

Related new products

Low Power SCR&TRIAC for Leakage Protection

ESDM Series ESD Protection Diodes with Ultra-low Junction Capacitance Value of 0.05 pF

N100V MOSFET for Automotive Electronic Applications

SGT N80-85V Power MOSFET

LFPAK56D MOSFET for Automotive

SOD-123HE TVS Diode

JC

SOD-323FL Small Package Rectifier Diode

DFN1006-3L Package Small Signal Device

High frequency C3 IGBT Module